Abstract
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space.
Highlights
Silicon carbide (SiC) has excellent properties for power device applications
We have considered 1200 V SiC metal-oxide-semiconductor field effect transistors (MOSFETs) devices and estimated the failure rate in
We have considered 1200 V SiC MOSFET devices and estimated the failure rate the space radiation environment for several different possible missions
Summary
Silicon carbide (SiC) has excellent properties for power device applications. SiC devices are ideally suited to high voltage, high power-density power converter applications, both on Earth and in space. These devices, in comparison to silicon devices, have advantages in breakdown voltage (~10× Si), low on-resistance (~1/100 Si), high temperature operation (~3× Si) and high thermal conductivity (~10× Si) [1]. SiC power MOSFETs are affected by total ionizing dose (TID), but, typically, TID response is acceptable at a total dose
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