Abstract
Metal-oxide-metal (MOM) capacitors are used widely in semiconductor integrated circuits. This study describes a method for failure analysis of MOM capacitor short-circuit. We present two case examples to highlight the significance of this method. Various techniques are described, such as thermal emission microscopy (ThEM), beam induced resistance change (OBIRCH), photoemission microscopy (PEM), focused ion beam (FIB), and passive voltage comparison (PVC). ThEM could be an effective alternative, albeit with low magnification. OBIRCH could help verify the defect location in the MOM structure, albeit with a large region of interest (ROI). The application of PEM based on an InGaAs detector can reduce the ROI and yield satisfactory fault isolation results. PVC can indicate the metal bridge phenomenon and help guide FIB cross-sectional analysis. To summarize, our observations indicate that PEM and PVC are effective alternatives for the failure analysis of MOM short-circuit failure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
