Abstract
In order to analyse failures caused in multilevel metallized LSI devices. we developed the OBIC (optical beam induced current) observation technique using an infrared laser incident upon a backside of the chip which appears from a plastic package by being lapped and polished. We analysed the electrical rejects in the reliability stressing of surface mount plastic packages with this technique. The latch-up phenomenon in 4Mbit dynamic RAM with retrograded-well fabricated by a high energy (MeV) ion-implantation was also examined. The high latch-up immunity of the device with retrograded-well is confirmed by this analysis.
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