Abstract
ABSTRACTThe reliability of high power Insulated Gate Bipolar Transistor (IGBT) modules is mainly limited by the aluminum wire bonds. Bond failure occurs due to fatigue fracture close to the welded interface inside the large bonding wire caused by thermal cycling at extreme operating conditions. This paper presents the results of the metallographic and electron microscopic examinations of the welded interface as well as fracture morphology investigations of failed parts after power cycling. Infrared thermal imaging and investigations of the stress/strain relationship analyze the differential expansion caused by temperature distribution and thermal expansion mismatch between large bonding wire and semiconductor.
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