Factors influencing the oxidation of silicon catalyzed by Cu/sub 3/Si at room temperature

C.S Liu,L.J Chen

doi:10.1109/edms.1994.771353

Factors influencing the oxidation of silicon catalyzed by Cu/sub 3/Si at room temperature

C.S Liu, L.J Chen

https://doi.org/10.1109/edms.1994.771353

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Publication Date: Jul 12, 1994

Affiliation: National Tsing Hua University

#Room Temperature Oxidation Of Silicon #Silicide Grain + Show 8 more

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Abstract

The dependence of room temperature oxidation of silicon catalyzed by Cu/sub 3/Si on silicide thickness, silicide grain size and the substrate orientation has been investigated by transmission electron microscopy and x-ray diffractometry. The extent of oxidation was found to depend critically on the thickness of starting Cu/sub 3/Si film. The oxidation was found to be more restricted on (III)Si than that of

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