Abstract
A study of various parameters affecting the crystallization process of amorphous silicon nitride produced by plasma gas-phase reaction was undertaken to determine the conditions under which whiskers are formed. This process is influenced by the ammonium chloride content of the starting powder and the presence of nitrogen in the furnace atmosphere. This last parameter is also influential on the α/β phase ratio, along with other factors like the silica content, temperature and duration of the thermal treatment. Heat treatment at 1500°C for 30 min under argon produced well-defined α-Si3N4 crystals with a hexagonal cross section, a mean length around 0.8 μm, and no sign of agglomeration. Under the same conditions, crystallization of silicon nitride in SiC-Si3N4 composite did not give crystals, but Si3N4 whiskers. Therefore silicon carbide plays a major role in their formation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
