Abstract
Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) are studied via photoluminescence and temperature-dependent electroluminescence spectra. Employing a dichromatic LED device, we demonstrate that the carrier recombination rate should be considered playing an important role in determining the carrier distribution in the MQW active region, not just the simple hole characteristics such as low mobility and large effective mass.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
