Factor analysis of AES sputter depth profiles of B, C and N sequentially implanted in silicon

Abstract

AbstractIn this work, a crystalline silicon wafer was sequentially implanted with N+, C+ and $\hbox{BF}_{2}^{+}$ ions of 25, 21 and 77 keV and doses up to 5 × 1017, 1 × 1018 and 5 × 1017 cm−2, respectively. The energies and doses of the respective ions were chosen according to standard simulations to obtain an implanted layer with the appropriate BC2N composition. After that, the sample was annealed at 1200°C for 3 h.The sample has been characterized by Auger electron spectroscopy (AES) depth profiling in order to get a quantitative analysis of the components in the sample. Factor analysis has been used to deconvolute the different chemical states of Si, B, C and N, and to identify different compounds. The analysis of the as‐implanted sample indicates the formation of a quaternary compound with an estimated average composition of SiB0.3C0.6N0.1 in a broad region close to the surface, as well as a ternary compound with an estimated average composition of SiB0.1N0.05 at the interface with the silicon substrate. The major effect induced by the thermal treatment is observed at the interface which shows an out‐diffusion of boron from the interface. Copyright © 2004 John Wiley & Sons, Ltd.