Abstract
Factor analysis of AES depth profiles is performed on combined spectral regions, thus employing a maximum amount of information. Applied to untreated and oxidized, sub-gm ceramic Si3N4 powders as well as to Si2N2O, this method reveals significant differences with regard to number and stoichiometry of main components. In case of hydrolyzed Si3N4, no significant difference compared with the untreated powder was observed, probably because of irradiation effects.
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