Abstract
The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition (CVD) process. Herein, graphene quantum dots (GQDs) as a novel seeding promoter were used to obtain uniform large-area MoS2 monolayer. The obtained monolayer MoS2 films were confirmed by optical microscope, scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS2 monolayer was largely homogeneous.
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