Facile synthesis of vanadium oxide nanowires

Jesse Kysar,Praveen Kumar Sekhar

doi:10.1007/s13204-015-0508-5

Jesse Kysar, Praveen Kumar Sekhar

Open Access

https://doi.org/10.1007/s13204-015-0508-5

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Journal: Applied nanoscience	Publication Date: Oct 30, 2015
Citations: 7	License type: CC BY 4.0

Affiliation: Washington State University Vancouver

Abstract

A simple growth process is reported for the synthesis of vanadium (II) oxide nanowires with an average width of 65 nm and up to 5 μm in length for growth at 1000 °C for 3 h. The vanadium (II) oxide nanowires were grown on a gold-coated silicon substrate at ambient pressure using a single heat zone furnace with Ar as the carrier gas. Gold was utilized as a catalyst for the growth of the nanowires. The growth temperature and heating time were varied to observe the nanowire morphology. An increase in nanowire width was observed with an increase in the heating temperature. A ninefold increase in the number density of the nanowires was observed when the heating time was changed from 30 min to 3 h. This is the first time a simple growth process for producing VO nanowires at ambient pressure has been demonstrated. Such a scheme enables wider use of VO nanowires in critical applications such as energy storage, gas sensors, and optical devices.

Highlights

Vanadium oxide has been applied in catalytic and electrochemical fields due to their outstanding structural flexibility combined with unique chemical and physical properties (Mai et al 2011; Liu et al 2005; Zhou et al 2012; Fu et al 2012; Dhawan et al 2014)
A simple growth process is reported for the synthesis of vanadium (II) oxide nanowires with an average width of 65 nm and up to 5 lm in length for growth at 1000 °C for 3 h
Recent investigations point to the growing popularity of the nanowire morphology of vanadium oxide(s) (Hong et al 2011; Perera et al 2013)

Summary

Introduction

Vanadium oxide has been applied in catalytic and electrochemical fields due to their outstanding structural flexibility combined with unique chemical and physical properties (Mai et al 2011; Liu et al 2005; Zhou et al 2012; Fu et al 2012; Dhawan et al 2014). Abstract A simple growth process is reported for the synthesis of vanadium (II) oxide nanowires with an average width of 65 nm and up to 5 lm in length for growth at 1000 °C for 3 h. The vanadium (II) oxide nanowires were grown on a gold-coated silicon substrate at ambient pressure using a single heat zone furnace with Ar as the carrier gas.

Results

Conclusion