Abstract

Nanostructure engineering is of great significance for semiconductor electrode to achieve high photoelectrochemical performance. Herein, we report a novel strategy to fabricate ultrafine hematite (α-Fe2O3) nanowire arrays in a mixed water-ethanol-acetic acid (WEA) solvent. To the best of our knowledge, this is the first report on direct growth of ultrafine (∼10 nm) α-Fe2O3 nanowire arrays on fluorine-doped tin oxide substrates through solution-based fabrication process. The effect of WEA ratio on the morphology of nanowires has been systematically studied to understand the formation mechanism. Photoelectrochemical measurements were conducted on both Ti-treated α-Fe2O3 nanowire and nanorod photoelectrodes. It reveals that α-Fe2O3 nanowire electrode has higher photocurrent and charge separation efficiencies than nanorod electrode if the carrier concentration and space-charge carrier width are in the same order of magnitude. Normalized by electrochemically active surface area, the Ti-treated α-Fe2O3 nanowire electrode obtains 6.4 times higher specific photocurrent density than nanorod electrode. This superiority of nanowires arises from the higher bulk and surface charge separation efficiencies, which could be partly attributed to reduced distance that holes must transfer to reach the semiconductor-liquid junction.

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