Abstract
ReS2 flakes were grown through a vacuum vapor transport method without additional carrier gas during the reaction of S and NH4ReO4 precursors. With the pre-oxidation treatment on SiO2/Si substrate, we successfully suppressed the out-of-plane growth of ReS2 crystal in a large extent to obtain a larger area ReS2 flake. Raman and transmission electron microscopy (TEM) measurements indicate the excellent crystalline quality. This work demonstrates the innovations of vacuum vapor transport growth and significant influence of substrate oxidation treatment in promoting the in-plane growth of ReS2 crystal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
