Abstract

Development of a thinner, wideband electromagnetic absorbing material that aims to address the growing electromagnetic pollution has becoming a hot topic. Herein, a heterojunction material consisting with 2-dimensional g-C3N4 and hierarchical flower shaped ZnO has been produced by a simple method, which exhibits the superior dielectric response ability. In details, the formed heterojunction with crossed energy structure benefits to the conductivity loss ability. Moreover, the as-prepared g-C3N4/ZnO with controlled interfaces possess the desirable interfacial polarization relaxation behavior, which may additional contribution for the dielectric loss. Owing to the improved conductive loss an interface polarization, the ultimately sample has a broad band EM absorption ability, with an effective absorption region of 5.3 GHz under a thin matched thickness of 1.5 mm. The method for designing of heterojunction-based material can be desirable candidate for the high-performance EM absorber.

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