Abstract
In search of simpler, environment friendly, scalable method to make device quality Cu2ZnSnS4 semiconductor thinfilms for solar cell applications, we have developed a solution based technique based on a highly stable precursor solution. A clear transparent precursor solution, stable for more than a year was prepared using a novel combination of the sulfur source and the solvent. The absorber film on Mo coated glass substrate was formed by dip-coating and drying in open air, followed by annealing in inert atmosphere. Further, we have fabricated and demonstrated a simple solar cell, combining this method with vacuum-free laminated conductive tape as the top electrode, having the device structure of glass/Mo/CZTS/CdS/Al.
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