Abstract
High-aspect-ratio II–VI semiconductor nanowires (NWs; see image) are prepared using solution–liquid–solid growth employing simple Bi salts. NW size control is achieved by varying the Bi content of the preparation, leading to wire diameters between 5 and 11 nm. Corresponding size-dependent trends are seen in the linear absorption/band-edge emission of the wires, suggesting carrier confinement.
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