Abstract
β‐Ga2O3 nanostructures on a large scale were fabricated on the Silicon substrate via vapor transport method in nitrogen ambient. The growth was carried out in a tube furnace with Ga metal and Ga2O3 powder serving as the source materials. The as synthesized products were characterized by GIXRD, SEM, HRTEM and room temperature photoluminescence. The diameter and length of β‐Ga2O3 nanowires ranges from 60–200 nm and 10–100 micron respectively. HRTEM observations suggested that the nanowires are single crystalline with interplaner distance of 0.47 nm. The PL spectrum of β‐Ga2O3 nanostructures exhibits a broad strong blue emission band centered at 450 nm. The possible growth and luminescence mechanism of β‐Ga2O3 nanostructures are also discussed.
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