Facile sulfur-assisted synthesis of GaAs nanowires /si heterojunctions for broadband self-powered photodetector

Abstract

Nanowires (NWs)-based heterojunction photodetectors (PDs) have been widely applied in the fields of remote sensing, night vision, environmental monitoring, and optical communications with high light absorption coefficient and photoelectric conversion efficiency. Here, S-GaAs NWs/Si heterojunction was developed to form a broadband self-powered PDs by growing GaAs NWs on Si substrate through the sulfur-catalyzed assisted chemical vapor deposition (CVD) technology. Compared with the pure GaAs NWs, the sulfur-assisted catalysts could not only inhibit Ostwald ripening of Au seeds to improve the crystalline quality of NWs but also form a thin Ga–S bond passivation layer to reduce surface defects and enhance the optoelectronic performance of the PDs. The fabricated GaAs NWs/Si heterojunction PDs exhibit excellent performances with the large responsivity of 10.3 mA W−1 and high detectivity of 9.59 × 1012 cm Hz1/2 W−1. Additionally, the designed PDs have the broadband wavelength photoresponse from visible to near infrared and fast response speed (rise/fall time of 3.8/21.8 ms). Importantly, the develop strategy of hybrid heterojunction PDs can be extended to other semiconductor materials for facilitating the practical application of high-performance optoelectronic devices.