Facile pyrolytic synthesis of copper zinc tin sulfide thin films for efficient counter electrodes in quantum dot sensitized solar cells

Abstract

Facile pyrolytic synthesis of copper zinc thin sulfide (Cu2ZnSnS4) thin films are first introduced into quantum dot sensitized solar cells (QDSCs) for the counter electrode. The pore size of the pyrolytic synthesis Cu2ZnSnS4 thin films is from 100nm to 300nm, and its charge transfer resistance is 37.10Ω. The assembled QDSCs with the pyrolytic synthesis Cu2ZnSnS4 thin films give short circuit photocurrent density (Jsc) of 13.33mAcm−2, open circuit voltage (Voc) of 0.52V, and fill factor (FF) of 0.45, corresponding to the photoelectric conversion efficiency (η) of 3.14%, while the QDSCs with platinized conducting glass give Jsc of 13.38mAcm−2, Voc of 0.51V, and FF of 0.34, corresponding to the η of 2.32%. Because the pyrolysis procedure is a facile, low cost and vacuum-free process, and has the advantage of obtaining various porous microstructure thin films and allowing deposition over large areas, the pyrolytic synthesis Cu2ZnSnS4 thin films can be a promise alternative to the noble Pt counter electrode in QDSCs.