Abstract
Semiconductor photocatalytic technology is a sustainable and less energy consuming one for nitrogen (N2) reduction to produce ammonia (NH3). In this study, flower-like hierarchical N doped MoS2 (N-MoS2) microsphere was synthesized as a photocatalyst by one-step solvothermal method, which was assembled by numerous interleaving nanosheets petals with thin thickness. Besides, Pt nanoparticles were loaded on the surface of N-MoS2 via photo-ultrasonic reduction method. The as-prepared Pt/N-MoS2 photocatalyst exhibited higher N2 fixation ability than that over pure MoS2 and N-MoS2, which can be attributed to that the N doping narrows the band gap, and the Schottky barrier due to the existence of Pt nanoparticles improves the charge transfer and carrier separation. The reduction of N2 with ultrasonic irradiation was also investigated under visible light irradiation to evaluate the sonophotocatalytic activity of the Pt/N-MoS2 microsphere. The results showed that the N2 reduction rate of sonophotocatalysis (133.8µmol/g(cat)h) was higher than that of sonocatalysis and photocatalysis, which can be ascribed to the synergistic effect of ultrasound and visible light irradiation. The effects of catalyst dosage, ultrasonic power and ultrasonic pulse on the photocatalytic efficiency were also studied. Meanwhile, a possible mechanism for improved sonophotocatalytic performance was also proposed.
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