Abstract
The dielectric behavior and microwave absorption (MA) performance of doped semiconductor indium tin oxide (ITO)/nanoporous carbon (NPC) composites were scanned by a combination of simulations and experiments. In this work, designed homogeneous ITO/NPC composites were synthesized for the first time by the direct pyrolysis of In metal-organic framework doped with Sn (In/Sn-MOFs). Precise regulation of the complex permittivity of ITO/NPC was possible by controlling the carrier concentration, which resulted in superior MA performance. In addition, the conductive network of NPC, large surface areas & pore volumes and abundant heterogeneous interface of ITO/NPC were found to be the key aspects for MA performance. When the ratio of Sn/In was 1:9, ITO/NPC-2 exhibited outstanding MA property at low frequency. At 4.57 GHz and 4.10 mm, the maximum RL value of −60.55 dB was reached; while the RL values below −8 dB were found in the low-frequency range of 3.72–5.42 GHz. In addition, a strong reflection loss (RL) of −45.12 dB was obtained at 12.90 GHz and a small thickness of 1.55 mm. This work might provide a convenient and novel method for the construction of low frequency microwave absorbers.
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