Abstract
Graphitic carbon nitride (g-C3N4) is an attractive photocatalyst owing to its non-metallicity, suitable band gap and high physicochemical stability. Nevertheless, the photocatalytic performance of pure g-C3N4 is limited by the fast recombination of photoinduced charge carriers. In this study, we overcame this problem by constructing g-C3N4-based composites to accelerate the electron-hole separation. The photocatalytic activity of In2O3/S-doped g-C3N4 (In2O3/SCN) in visible-light-driven (VLD) hydrogen evolution was remarkably improved, which was ascribed to the inhibited charge carrier recombination.
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