Abstract
AbstractIn this work, high‐crystalline Ga2O3 nanorods with improved photoelectrochemical properties were fabricated on Ti substrates by a facile electrodeposition. The photocurrent density of oval‐like Ga2O3 nanorods is 122.4 uA cm−2 at 0.6 V vs. Ag/AgCl, which is much higher than that of rectangular Ga2O3 nanorods (69 uA cm−2). This enhancement in performance might be ascribed to the decreased bandgap energy, which greatly promotes its oxidation ability of photogenerated hole.
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