Abstract
Aligned arrays of ultralong CoOEP nanowires were fabricated by a facile solution process. The prototype devices based on the as-obtained ordered array showed excellent optoelectronics performance with an on-to-off current ratio of 1.7 × 104 and an average mobility of 1.4 × 10−3 cm2 V−1 s−1 in the dark. Moreover, the ordered array of CoOEP nanowires exhibited highly photosensitive field-effect transistor characteristics, which had a photoresponsivity of 3.5 mA W−1 and a photo-current/dark-current ratio of 4.3 × 103 at low gate voltage of 6.5 V. The facile fabrication and good photoresponse makes the CoOEP nanowire arrays promising in optoelectronic applications.
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