Abstract
The α-Fe2O3/Ag2S p-n heterojunction has been prepared via a facile room temperature successive ionic layer adsorption and reaction (SILAR) method. The heterojunction exhibits higher photoelectrochemical property compared to bare α-Fe2O3. The amount of Ag2S has a significant effect on the PEC performance, which could be controlled by varying the number of SILAR cycles. The α-Fe2O3/Ag2S p-n heterojunction prepared via 6 cycles of SILAR processes displays the best photoelectrochemical performance, which exhibits 1.8 times enhancement of photocurrent density and 70 mV cathodic shift of onset potential compared to bare α-Fe2O3. The improved PEC performance could be attributed to the formation of p-n junction between Ag2S and α-Fe2O3, which not only enhanced the optical absorption ability, but also facilitated the separation efficiency of photogenerated charge carriers and passivized the surface state.
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