Abstract
A facile and economic solution based technique is developed for the deposition of SnO2—Reduced Graphene Oxide (RGO) heterostructure thin films. The single step deposition process leads to uniformly dispersed SnO2 nanocrystallites on well exfoliated RGO sheets as confirmed by x-ray diffraction, Raman spectroscopy and transmission electron microscopy investigations. The response to NO2 gas at room temperature (25 °C) is studied. The interface between n-type SnO2 and p-type RGO flakes forms a hetrostrcuture barrier, which enhances the native sensitivity of pristine RGO towards toxic gases like NO2. The technique allows controlling the density of SnO2 nanoparticles (∼3 nm in size) attached to the RGO flakes and thereby enhancing the response of the heterostructure sensor device. The highest SnO2 loading shows a 14 fold increase in response to 200 ppm of NO2 and a response time as low as 5 s compared to that of ∼200 s for bare RGO films.
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