Abstract
Multiazimuth 360° observation of InGaAs/GaAs quantum dots (QDs) was performed with a 300 kV scanning transmission electron microscope, where both cross-sectional and plan-view images of the same specific QDs can be taken for a single specimen. The facet structure of truncated pyramids was reconstructed from facet-enhanced bright-field images newly observed with the incident axes slightly off from 〈−552〉 or 〈−332〉, resulting in high contrast for the lattice distortion on (110) facets of InGaAs QDs. Dark-field images for a large QD clearly indicate indium distribution inside the large QD, originating from the coalescence of two small QDs during growth. Localized relaxation of the lattices was observed, for the same large QD with indium content fluctuation, as disturbed/disappeared moire-fringes in the images taken with the incidence around 〈−552〉.
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