Abstract
We have used scanning tunneling microscopy to study the faceting of oriented steps on Si(001) and Ge(001) surfaces. The oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas oriented steps on Ge(001) meander along the mean direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.
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