Abstract
We report on the fabrication of large-area, vertically aligned GaN epitaxial core-shell micropillar arrays. The two-step process consists of inductively coupled plasma (ICP) etching of lithographically patterned GaN-on-Si substrate to produce an array of micropillars followed by selective growth of GaN shells over these pillars using Hydride Vapor Phase Epitaxy (HVPE). The most significant aspect of the study is the demonstration of the sidewall facet control in the shells, ranging from {11̄01} semi-polar to {11̄00} non-polar planes, by employing a post-ICP chemical etch and by tuning the HVPE growth temperature. Room-temperature photoluminescence, cathodoluminescence, and Raman scattering measurements reveal substantial reduction of parasitic yellow luminescence as well as strain-relaxation in the core-shell structures. In addition, X-ray diffraction indicates improved crystal quality after the shell formation. This study demonstrates the feasibility of selective epitaxy on micro-/nano- engineered templates for realizing high-quality GaN-on-Si devices.
Highlights
We report on the fabrication of large-area, vertically aligned GaN epitaxial core-shell micropillar arrays
The two-step process consists of inductively coupled plasma (ICP) etching of lithographically patterned GaN-on-Si substrate to produce an array of micropillars followed by selective growth of GaN shells over these pillars using Hydride Vapor Phase Epitaxy (HVPE)
This paper demonstrates the use of a simple phosphoric acid (PA) etch of GaN-on-Si pillars before HVPE
Summary
We report on the fabrication of large-area, vertically aligned GaN epitaxial core-shell micropillar arrays. X-ray diffraction (XRD), room-temperature photoluminescence (PL), cathodoluminescence (CL), and Raman spectroscopy measurements are conducted on the core-shell structures, with results indicating significant improvement in the crystal quality and optical properties as well as reduction of strain in the overgrown structures as compared to the initial epitaxial GaN film on Si substrate.
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