Abstract
Degradation of the facets represents a major reason reducing the performance and the lifetime of high-power laser diodes. Nonradiative surface recombination of electrons and holes results in a strong heating of the facet region and subsequent defect accumulation. We theoretically investigated facet heating of an asymmetrically coated 20-stripe GaAs/GaAlAs laser diode array by a self-consistent calculation of the axial profiles of temperature, carrier density, and optical intensity. To validate the model, we measured the facet temperature as a function of injection current using micro-Raman spectroscopy. Our results point to the possibility of catastrophical optical damage at the reflection-coated facet arising from the asymmetric thermal load of the facets.
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