Abstract
Very fast growth of the c-facet of a 4 He crystal was induced by acoustic waves. The growth velocity was larger at lower temperatures and saturated below about 400 mK. The velocity was proportional to the acoustic wave power. This fast growth cannot be explained by the spiral growth mechanism for the known value of the step mobility. We developed a step multiplication model for high-power acoustic waves and found reasonable agreement with the observed temperature and power dependence of the growth velocity.
Highlights
Haruka A BE, Yu S AITOH, Tetsuto U EDA, Futoshi O GASAWARA, Ryuji N OMURA, Yuichi O KUDA and Alexander Ya
The velocity was proportional to the acoustic wave power. This fast growth cannot be explained by the spiral growth mechanism for the known value of the step mobility
We developed a step multiplication model for high-power acoustic waves and found reasonable agreement with the observed temperature and power dependence of the growth velocity
Summary
Haruka A BE, Yu S AITOH, Tetsuto U EDA, Futoshi O GASAWARA, Ryuji N OMURA, Yuichi O KUDA and Alexander Ya. Facet Growth of 4 He Crystal Induced by Acoustic Waves Very fast growth of the c-facet of a 4 He crystal was induced by acoustic waves. This fast growth cannot be explained by the spiral growth mechanism for the known value of the step mobility.
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