Abstract
SrLaAlO4 (SLA) crystals have been grown by the Czochralski method on a [100] seed. One common problem during SLA growth is a distinct tendency for the formation of stacking faults and of polycrystalline material on facets and edges. It could be observed that the polycrystalline growth results from the highly different wetting of neighboring facets that are forming the habit of the SLA crystal. The different degrees of wetting can be estimated on the basis of a relative Coulomb interaction energy. This interaction energy is proportional to the sum of Coulomb charge densities of the different ions that are present in the crystal surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
