Fabrication visible-blind ultraviolet photodetector based on ZnS/GaN heterostructure with fast response

Abstract

In this paper, visible-blind ultraviolet (UV) detectors based on a ZnS/p-GaN heterojunction structure were fabricated. The heterojunction structure was composed of a ZnS nanostructure deposited on a p-GaN/sapphire substrate. The ZnS nanostructured component was obtained via radio-frequency magnetron sputtering. The device based on this ZnS/p-GaN heterojunction structure showed a reproducible, stable, and fast response speed. Therefore, the results demonstrated that the ZnS/p-GaN heterojunction was successfully fabricated using this relatively low-cost method.