Abstract

Three-electrode DFB (distributed feedback) lasers with excellent performance and single-mode yield have been fabricated using a robust technology which includes MOVPE (metal-organic vapor-phase epitaxy) growth of quantum wells, reactive ion etching, semi-insulating regrowth by hydride VPE, and separate grating layers. Line widths below 1 MHz, modulation response over 10 GHz, and very high side mode suppression of 51 dB were achieved. The authors have fabricated and evaluated such lasers for the 1.55- mu m-wavelength region in the InGaAsP/InP materials system. >

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