Abstract
An acceleration sensor based on piezoelectric thin films is proposed in this paper, which comprises the elastic element of a silicon cantilever beam and a piezoelectric structure with Li-doped ZnO piezoelectric thin films. The Li-doped ZnO piezoelectric thin films were prepared on SiO2/Si by radio frequency (RF) magnetron sputtering method. The microstructure and micrograph of ZnO piezoelectric thin films is analysed by a X-ray diffractometer (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and piezoresponse force microscopy (PFM), respectively. When the sputtering power of 220 W and Li-doped concentration of 5%, ZnO piezoelectric thin films have a preferred (002) orientation. The chips of the sensor were fabricated on the <100> silicon substrate by micro-electromechanical systems (MEMS) technology, meanwhile, the proposed sensor was packaged on the printed circuit board (PCB). The experimental results show the sensitivity of the proposed sensor is 29.48 mV/g at resonant frequency (1479.8 Hz).
Highlights
ZnO is a typical n-type compound semiconductor
The crystal structure of the Li-doped ZnO thin films is characterized by X-ray diffractometer (XRD) (Bruker AXS D8 ADVANCE, Bruker Corporation, Karlsruhe, Germany)
The peak position is shifted to the right, indicating that the degree of ZnO crystallization decreases with the doping concentration, which is in agreement with the XRD patterns proposed by P
Summary
ZnO is a typical n-type compound semiconductor. ZnO thin films have many advantages, such as wide band gap (Eg ≈ 3.37 eV), high visible light transmittance, good ultraviolet absorption, and high electrical conductivity, etc. [1,2,3,4,5,6]. In 2008, S.H. Jeong, et al prepared Lithium-doped ZnO (LZO) films which were deposited by a radio frequency (RF) magnetron sputtering method using a Li-doped ZnO ceramic target with various ratios (0 to 10 wt% LiCl dopant). In 2017, V.V. Sasi, et al prepared performed c-axis oriented ZnO films on top of Si(111) substrates with a 3C-SiC(111) epitaxial buffer layer by RF magnetron sputtering method. Et al prepared performed c-axis oriented ZnO films on top of Si(111) substrates with a 3C-SiC(111) epitaxial buffer layer by RF magnetron sputtering method They researched the effect of the different O2/Ar ratios on the ZnO (002) crystal orientation. The impedance and piezoelectric properties of the ZnO thin films could be improved
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