Fabrication , Structural and Optical Characterization of in Doped ZnO Thin Films Prepared by the Colloidal Method

M Medjaldi,M Zaabat,O Touil,M Sebais,O Halimi,B Boudine

doi:10.12816/0010305

Abstract

Regarding to the excellent conductivity and high transparency in the visible range, the zinc oxide (ZnO) films have been widely used as transparent electrodes in optoelectronic devices, ZnO is a direct wide band-gap (3.37 eV) semiconductor. The conductivity of ZnO will be largely enhanced by doping little In, but it still keeps high transparency. So, IZO film has been widely investigated and is considered to be a promising possible alternative to ITO films. This work consist to the (...)

Highlights

zinc oxide (ZnO) is a n-type compound semiconductor with a large exciton binding energy of 60 meV at room temperature and a wide direct band gap of 3.37eV, and high transmission in the visible range, which provides it the potential application in various optoelectronic applications such as optical sensors and light emitters, etc... [1,2]
The XRD and Raman characterizations show that the ZnO thin film crystallize with a wurtzite structure
Indium doped ZnO thin films were prepared on glass matrix by colloidal method, with different concentrations

Summary

Introduction

ZnO is a n-type compound semiconductor with a large exciton binding energy of 60 meV at room temperature and a wide direct band gap of 3.37eV, and high transmission in the visible range, which provides it the potential application in various optoelectronic applications such as optical sensors and light emitters, etc... [1,2]. We fabricated two In-doped ZnO samples, which are 0,5 and 1% IZO. Their structures were characterized in this paper. Raman scattering measurements were designed to obtain more detailed information of the structures in Indoped ZnO nanomaterials. 2. Experimental To prepare a ZnO solution, 1.5g of zinc acetate dihydrate (Zn (CH3COO)2 2H2O) was dissolved in 30 ml of absolute ethanol at room temperature. The obtained films were preheated at 100°C for 10min and the heat treatment was carried out at 500°C for 2h. The crystal structure and phase of the samples were characterized by X-ray diffraction technique using Bruker AXS D8 Discover diffractometer, CuKα1 (λ=1.54056 A°), where the angle ranges within 20°80°. The films transmittance was recorded by Shimadzu 3600 PC double beam UV-VIS-NIR spectrometer

Results and discussion

The wurtzite

Conclusion