Abstract
In order to realize a low threshold vertical-cavity surface-emitting laser (VCSEL), we have fabricated a micro-cavity structure by a native oxidation technique. The strong optical and electrical confinements enabled to achieve low thresholds. For further threshold reduction, we have demonstrated an n-type modulation doped quantum well (QW) laser and a 30% reduction of threshold in n-type doped QW laser compared with undoped QW lasers is observed. These are the first experiments for InGaAs/AlGaAs materials.
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