Fabrication of Zr–N codoped p-type ZnO thin films by pulsed laser deposition

Abstract

N-doped and Zr–N codoped p-type ZnO films were grown on sapphire substrates by pulsed laser deposition. The carrier type and conduction are very sensitive to N2O deposition pressure. p-type conduction is observed only for films grown at an intermediate pressure range (5×10−5–5×10−4Torr). The Zr–N codoped ZnO films grown at 500°C in 5×10−5Torr of N2O show p-type conduction behavior with a low resistivity of 0.026Ωcm, a carrier concentration of 5.5×1019cm−3, and a mobility of 4.4cm2V−1s−1. The p-type conduction behavior of Zr–N codoped ZnO films is also confirmed by the rectifying I-V characteristics of p-n heterojunctions (p-ZnO∕n-Si).