Abstract
A ZnO seed layer was formed on the fluorine-doped tin oxide substrate by magnetron sputtering, and then a ZnO nanorod was grown on the ZnO seed layer by a hydrothermal method. Next, we prepared a single-crystal Ag seed layer by magnetron sputtering to form a ZnO@Ag composite heterostructure. Finally, Ag3PO4 crystals were grown on the Ag seed layer by a stepwise deposition method to obtain a ZnO@Ag@Ag3PO4 ternary heterojunction. The composite heterostructure of the material has super strong hydrophilicity and can be combined with water-soluble pollutants very well. Besides, it has excellent anti-reflection performance, which can absorb light from all angles. When Ag exists in the heterojunction, it can effectively improve the separation of photo-generated electrons and holes, and improve the photoelectric conversion performance. Based on the above characteristics, this nano-heterostructure can be used in the fields of solar cells, sensors, light-emitting devices, and photocatalysis.
Highlights
With the rapid development of the global economy, people’s living standards have been greatly improved
Recent studies have shown that when Ag is deposited on ZnO nanorods, Ag acts as a bridge and will inhibit the recombination of photogenerated electrons (e−)-h+ in ZnO nanorods [23]
We use the results obtained in the previous experiment as the substrate for subsequent experiments (3#), and a metal Ag layer was sputtered by magnetron
Summary
With the rapid development of the global economy, people’s living standards have been greatly improved. Ag3PO4 has a lower valence band potential, generates photogenerated holes (h+), and has a strong oxidation effect [24,25] It has excellent photocatalytic properties and can degrade organic pollutants in natural light [26]. Many researchers have selected appropriate metals or semiconductors to combine with target semiconductors to form specific multiple heterostructures [28,29,30,31,32,33,34,35], and this heterostructure can effectively regulate the energy band structure, change the distribution of surface charge, improve the photoelectric performance of the entire material. The semiconductor-metal interface (Schottky barrier) is formed by the deposition of Ag3O4, which prevents the recombination of photoinduced electrons(e−)-holes (h+), and reduces the photo corrosion effect through this interface
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