Abstract
We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (Jsc) and the open-circuit voltage (Voc) of the solar cells on p-GaN templates are 1.9μA/cm2 and 0.16V, whereas Jsc and Voc are enhanced to 2.5μA/cm2 and 0.19V under simultaneous irradiation of green laser light (532nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template.
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