Abstract
We have developed processing for the Y-system coated conductor on metal substrates by the liquid phase epitaxy (LPE) method [1]. A double layer structure of YBa 2Cu 3O y LPE/YBa 2(Cu,Mg) 3O y LPE/MgO Hastelloy was proposed. The YBa 2(Cu,Mg) 3O y layer, however, often melts back at dipping for the growth of the top YBa 2Cu 3O y layer. We considered to make the growth temperature lower for the top layer growth to solve this problem. This idea was confirmed in the combination of YBa 2Cu 3O y /NdBa 2(Cu,Mg) 3O y . The NdBa 2(Cu,Mg) 3O y layer was grown from the MgO saturated solution on an MgO single crystal substrate and the YBa 2Cu 3O y layer was grown on the layer. The suppression of melting back of the Nd123 layer was clearly confirmed and the double layer film reveals the T c value of 90 K by the transport measurement.
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