Abstract
Reactive ion etching (RIE) of epitaxial, strained Si 1−xGe x alloys (x < 0.2) using SiCl 4 and CF 4 mixtures has been investigated. RIE using CF 4/O 2 plasmas was found to have a significant chemical effect resulting in undercut etch profiles. Anisotropic etch profiles were found from SiCl 4 and SiCl 4/CF 4 plasmas indicating the physical etching nature of the chlorine based plasmas. The etch rates of the Si 1−xGe x alloys increased with increasing Ge content for the SiCl 4 and SiCl 4/CF 4 etch systems. The addition of CF 4 to SiCl 4 plasmas was found to reduce surface roughness or “grass”, which is a known problem in chlorine based etching of Si. Wires with widths below 100nm have been fabricated.
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