Abstract
Planar buried heterostructure (PBH) was adopted to fabricate a sampled grating distributed Bragg reflector laser diode (SGDBR-LD) having a low threshold current and a stable fundamental transverse mode. The etching process for butt-coupling was optimized to improve the reproducibility and the uniformity of the butt-coupled waveguide. The maximum output power of the fabricated SGDBR-LD was 20 mW at 200-mA continuous-wave operation at 25/spl deg/C. The output power was measured 10 and 9 mW higher than those of ridged waveguide (RWG) structure and buried ridge stripe (BRS), and the threshold current was slightly higher than those of RWG and BRS. The spectra of 25 channels spaced 50 GHz within the tuning range of 44.4 nm was obtained by a precise control of SG and phase control currents. The side-mode suppression ratio of more than 35 dB was obtained in the whole tuning range. The output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structure.
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