Fabrication of Volcano-Structured Double-Gate Field Emitter Array by Etch-Back Technique

Abstract

Volcano-structured double-gate field emitter arrays (VDG-FEAs) were fabricated using the etch-back technique. The fabrication process of the VDG-FEA is simple, and the height (hf) of the focusing electrode relative to the extraction gate electrode is easily adjusted by varying the etch-back time without high-resolution lithography. We have fabricated two types of VDG-FEAs with hf = +220 and 0 nm. The focusing characteristic is controlled by tuning hf. The decrease of the anode current is reduced for the VDG-FEA with lower hf under focusing condition producing the same beam spot size.