Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

Abstract

V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by, combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (t/sub p-CBL/), and a doping concentration (n/sub p-CBL/) of the p-GaAs current-blocking layer (CBL) were determined to be W=1.2 /spl mu/m, t/sub p-CBL/=2 /spl mu/m, and n/sub p-CBL/=1/spl times/10/sup 18/ cm/sup -3/. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.