Abstract
In recent years, reports on highly efficient UV LEDs and UV laser diodes have been published one after another. Considering the application field of UV semiconductor light-emitting devices, it is essential to achieve high output, i.e., high current density operation, and it is important to establish a fabrication process for vertical devices to realize this. A 1cm square wafer with deep-UV LEDs stacked on a sapphire substrate was successfully separated from the substrate to fabricate vertical LEDs. In this study, an Al0.68Ga0.32N underling layer was formed on an AlN template with periodic pillars, and a process that enables reproducible substrate detachment was successfully developed. The fabricated vertical LEDs successfully exhibit remarkable luminescence characteristics (peak wavelength: 298 nm) up to a current density of ~43 kA cm<sup>-2</sup> at room temperature and pulse driving. Applications to high-power ultraviolet region LEDs and laser diodes are expected.
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