Abstract

A strained InGaAs quantum wire laser with a vertical microcavity structure was fabricated for the first time. In this laser structure, quantum wires with a lateral width of about 10 nm were grown by a selective metalorganic chemical vapor deposition technique. The length of the microcavity was 4λ(λ=883 nm), with AlAs/AlGaAs distributed Bragg reflectors. The cavity effect was demonstrated by the measurement of photoluminescence with and without the cavity. Lasing oscillation was observed at 77 K by optical pumping.

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