Abstract
We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor–liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and diameter of 1 to 10 μm and 100 nm, respectively. The vertical GaN/InGaN coaxial heterostructure nanowires (COHN) are then fabricated by the subsequent deposition of 2 nm of InxGa1-xN shell on the surface of GaN nanowires. The vertical GaN/InGaN longitudinal heterostructure nanowires (LOHN) are also fabricated by subsequent growth of an InGaN layer on the vertically aligned GaN nanowires using the catalyst. The photoluminescence from the COHN and LOHN indicates that the optical properties of GaN nanowires can be tuned by the formation of a coaxial or longitudinal InGaN layer. Our study demonstrates that the bi-metal catalysts are useful for growing vertical as well as heterostructure GaN nanowires. These vertically aligned GaN/InGaN heterostructure nanowires may be useful for the development of high-performance optoelectronic devices.
Highlights
Gallium nitride (GaN) is a promising material for optoelectric and electronic devices such as laser diodes, light-emitting diodes, solar cells, and high-performance field effect transistors [1,2] nanowires have been of great interest as building blocks for highperformance nanodevices because of their high crystalline quality, large surface-to-volume ratio, and size confinement effects
In summary, we have achieved the vertical growth of GaN nanowires via a VLS mechanism using Au/Ni bi-metal catalysts, which leads to the growth of nanowires without the interfacial layer between the nanowires and the substrate and, in turn, enables their vertical growth
transmission emission microscopy (TEM) studies have shown that the GaN nanowires are singlecrystalline and dislocation-free
Summary
Gallium nitride (GaN) is a promising material for optoelectric and electronic devices such as laser diodes, light-emitting diodes, solar cells, and high-performance field effect transistors [1,2] nanowires have been of great interest as building blocks for highperformance nanodevices because of their high crystalline quality, large surface-to-volume ratio, and size confinement effects. GaN nanowires have great potential for application in high-performance optoelectronics [3,4,5]. The growth of GaN nanowires have been discussed in many previous studies [2,6,7]. The modulation of nanowires, for example, the preparation of a vertical array, creation of a heterostructure, and doping, has been studied to exploit the potential of nanowires. One of the issues in this modulation is the fabrication of vertically aligned nanowires because it is necessary for the manufacturing of optical nanowire devices with high performance [4,8,9,10,11]. Compared to randomly oriented nanowires, vertically aligned nanowires have a specific
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