Abstract
Abstracts We fabricated Si/SiO 2 multilayered films having nanometer-order thicknesses of Si and SiO 2 layers by using radio-frequency magnetron sputtering and subsequently annealed the samples at high temperatures of 1150 to 1250 °C. We observed ultraviolet photoluminescence having a sharp peak at a wavelength of around 370 nm, generated by using a He–Cd laser (wavelength λ = 325 nm) at room temperature, from a sample annealed at 1200 °C. The peak energy was 3.4 eV ( λ ~ 370 nm), and the full width at half maximum of the peak was 0.20 eV. Ultraviolet-light emission can be useful for light sources of higher-density optical-disk systems.
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