Abstract
The fabrication of ultrasmall high-quality intrinsic Josephson junctions (IJJs) using a cuprate superconductor is critical for the realization of a qubit. We investigated the mechanism of damage induced by a Ga+ beam in a Bi2Sr2CaCu2O8+δ IJJ during focused ion beam (FIB) processing. On the basis of the results, we developed a process that allowed the successful fabrication of an ultrasmall and high-quality IJJ. The damage induced by the FIB is reduced by restricting the direction of the Ga+ beam so that the junction area is not directly irradiated by the ion beam. The fabricated ultrasmall IJJ device has a junction area of 0.3 µm2 and shows excellent current–voltage characteristics.
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